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Mon, 20 May 2013.
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Multi-Bit Flash Memory Device and Program and Read Methods Thereof

Abstract

The flash memory device of the present invention is configured to program a plurality of bits per unit cell, wherein a program condition of a selected bit is set according to whether a program for the most previous bit to the selected bit for programming is skipped or not skipped. As a result, an accurate programming and reading operation is possible even in case a program for a middle bit is skipped.

Filed on: 2008-10-21; Application Number: 12255211

Applicant(s)

Seung Jae Lee
Dong Hyuk Chae
Dong Ku Kang

Agent

MYERS BIGEL SIBLEY SAJOVEC

Assignee

Samsung Electronics Co Ltd