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NON-VOLATILE MEMORY DEVICES INCLUDING VERTICAL NAND CHANNELS AND METHODS OF FORMING THE SAME
Abstract
A non-volatile memory device can include a plurality of immediately adjacent offset vertical NAND channels that are electrically coupled to a single upper select gate line or to a single lower select gate line of the non-volatile memory device.
Filed on: 2010-02-05; Application Number: 12701246
Applicant(s)
Sukpil KimKwangSoo Seol
Yoondong Park