impluCorporation

• Patents > 2010-11-04 > SECTION G PHYSICS > INFORMATION STORAGE > STATIC STORES

MSB-BASED ERROR CORRECTION FOR FLASH MEMORY SYSTEM

Abstract

A flash memory system includes a multi-bit flash memory device having a memory cell array including memory cells arranged in rows and columns; a read circuit configured to read data from the memory cell array; and control logic configured to control the read circuit so as to successively read data from a selected memory cell and adjacent memory cells to the selected memory cell in response to a request for a read operation with respect to MSB data stored in the selected memory cell. A compare circuit is configured to compare data read from the adjacent memory cells to the selected memory cell provided from the multi-bit flash memory device and to correct data read from the selected memory cells based upon the comparison result.

Filed on: 2010-07-14; Application Number: 12836249